硅纳米线垂直环绕栅场效应晶体管的实现。 - Suppr

Realization of a silicon nanowire vertical surround-gate field-effect transistor.

作者信息

Schmidt Volker, Riel Heike, Senz Stephan, Karg Siegfried, Riess Walter, Gösele Ulrich

机构信息

IBM Zurich Research Laboratory, Säumerstrasse 4, 8803 Rüschlikon, Switzerland.

出版信息

Small. 2006 Jan;2(1):85-8. doi: 10.1002/smll.200500181.

DOI:10.1002/smll.200500181

PMID:17193560

Abstract

摘要

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Realization of a silicon nanowire vertical surround-gate field-effect transistor.

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