Lu Tien-Chang, Cheng Bo-Siao, Liu Mei-Chung
Department of Photonics, National Chiao-Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan.
Opt Express. 2009 Oct 26;17(22):20149-54. doi: 10.1364/OE.17.020149.
Temperature dependent gain characteristics and linewidth enhancement factor (alpha-factor) of vertical-cavity surface-emitting lasers with InGaN/GaN multiple quantum wells were studied by measuring the photoluminescence spectra below the threshold condition and analyzed by using the Hakki-Paoli method. The optical gain and differential gain showed a more rapid increase as a function of the injected carriers as temperature decreased. The alpha-factor for the lasing mode was estimated as 2.8 at room temperature and decreased to a value as low as 0.6 at 80 K.
通过测量阈值条件以下的光致发光光谱，研究了具有InGaN/GaN多量子阱的垂直腔面发射激光器的温度相关增益特性和线宽增强因子（α因子），并采用哈基-保利方法进行分析。随着温度降低，光增益和微分增益随注入载流子的函数关系呈现出更快的增加。室温下激射模式的α因子估计为2.8，在80 K时降至低至0.6的值。
