利用一维光子晶体纳米腔实现硅中的极低功率光学双稳性。

Extremely low power optical bistability in silicon demonstrated using 1D photonic crystal nanocavity.

作者信息

Haret Laurent-Daniel, Tanabe Takasumi, Kuramochi Eiichi, Notomi Masaya

机构信息

NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan.

出版信息

Opt Express. 2009 Nov 9;17(23):21108-17. doi: 10.1364/OE.17.021108.

DOI:10.1364/OE.17.021108

PMID:19997350

Abstract

We demonstrate optical bistability in silicon using a high-Q (Q > 105) one-dimensional photonic crystal nanocavity at an extremely low 1.6 microW input power that is one tenth the previously reported value. Owing to the device's unique geometrical structure, light and heat efficiently confine in a very small region, enabling strong thermo-optic confinement. We also showed with numerical analyses that this device can operate at a speed of approximately 0.5 micros.

摘要

我们利用一个高品质因数（Q>105）的一维光子晶体纳米腔在硅中实现了光学双稳性，其输入功率极低，仅为1.6微瓦，是先前报道值的十分之一。由于该器件独特的几何结构，光和热有效地限制在一个非常小的区域内，实现了强大的热光限制。我们还通过数值分析表明，该器件可以以约0.5微秒的速度运行。