Tanabe Takasumi, Nishiguchi Katsuhiko, Kuramochi Eiichi, Notomi Masaya
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan.
Opt Express. 2009 Dec 7;17(25):22505-13. doi: 10.1364/OE.17.022505.
We have fabricated high-Q photonic crystal nanocavities with a lateral p-i-n structure to demonstrate low-power and high-speed electro-optic modulation in a silicon chip. GHz operation is demonstrated at a very low (microW level) operating power, which is about 4.6 times lower than that reported for other cavities in silicon. This low-power operation is due to the small size and high-Q of the photonic crystal nanocavity.
我们制造了具有横向p-i-n结构的高品质因子光子晶体纳米腔，以展示硅芯片中的低功耗和高速电光调制。在非常低的（微瓦级）工作功率下实现了GHz运行，该功率比硅中其他腔所报道的功率低约4.6倍。这种低功耗运行归因于光子晶体纳米腔的小尺寸和高品质因子。
