Advanced Materials and Process Research Center for IT, School of Chemical Engineering, Sungkyunkwan University, Suwon, 440-746, Republic of Korea.
Talanta. 2010 Jan 15;80(3):1371-7. doi: 10.1016/j.talanta.2009.09.038.
The porous Cu film was deposited on a Pt/Ti/Si substrate by electrochemical deposition accompanied by hydrogen evolution at very high current densities. CuO films with similar morphologies were obtained by subsequent annealing of the porous copper films. The morphology, composition and structure of the porous Cu and porous CuO were investigated by FE-SEM, EDS and XRD methods. The complete transformation of Cu to CuO after annealing was indicated. The sensing performances of the porous CuO film were evaluated in alkaline solution with the porous CuO film showing a wide linearity range from 1microM to 2.5mM with sensitivity of 2.9mAcm(-2)mM(-1), and detection limit of 0.14microM. The sensor showed good selectivity to conventional intermediates such as AA and UA and long term stability.
多孔铜膜是通过在高电流密度下伴随析氢反应的电化学沉积在 Pt/Ti/Si 基底上沉积得到的。随后对多孔铜膜进行退火处理，得到了具有相似形貌的 CuO 薄膜。采用 FE-SEM、EDS 和 XRD 方法研究了多孔 Cu 和多孔 CuO 的形貌、组成和结构。结果表明，退火后 Cu 完全转化为 CuO。在碱性溶液中对多孔 CuO 薄膜的传感性能进行了评价，多孔 CuO 薄膜在 1μM 至 2.5mM 的线性范围内具有 2.9mAcm(-2)mM(-1)的灵敏度和 0.14μM 的检测限。该传感器对 AA 和 UA 等常规中间产物具有良好的选择性和长期稳定性。
