增强半导体单壁碳纳米管的光致发光。
Enhancement of semiconducting single-wall carbon-nanotube photoluminescence.
机构信息
Institut d'Electronique Fondamentale, CNRS-UMR 8622, Université Paris-Sud 11, 91405 Orsay, France.
出版信息
Opt Lett. 2009 Dec 15;34(24):3845-7. doi: 10.1364/OL.34.003845.
Photoluminescence properties of semiconducting single-wall carbon-nanotube (s-SWNT) thin films with different metallic single-wall carbon-nanotube (m-SWNT) concentrations are reported. s-SWNT purified samples are obtained by polymer-assisted selective extraction. We show that the presence of a few m-SWNTs in the sample generates a drastic quenching of the emission. Therefore, the highly purified s-SWNT film is a strongly luminescent material and a good candidate for future applications in photonics, such as near-IR emitters, modulators, and detectors.
本文报道了不同金属单壁碳纳米管(m-SWNT)浓度下半导体单壁碳纳米管(s-SWNT)薄膜的光致发光特性。通过聚合物辅助选择性提取得到 s-SWNT 纯化样品。我们表明，样品中存在少量 m-SWNTs 会导致发射急剧猝灭。因此，高度纯化的 s-SWNT 薄膜是一种强发光材料，是未来在光子学中应用的良好候选材料，例如近红外发射器、调制器和探测器。
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