School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.
ACS Nano. 2010 Mar 23;4(3):1377-84. doi: 10.1021/nn9010076.
In this report, we present a description of the optical and electronic properties of as-deposited, annealed, and chemically treated single-walled carbon nanotube (SWNT) films showing metallic or semiconducting behavior. As-deposited and annealed semiconducting SWNT films were significantly less conductive than metallic SWNT films; however, chemical treatment of semiconducting SWNT films resulted in sheet resistance values as low as 60 Omega x sq(-1) in comparison to 76 Omega x sq(-1) for similarly processed metallic SWNT films. We conclude that the greater improvement of electrical conductivity observed in the semiconducting SWNT film results from the difference in the density of available electronic states between metallic and semiconducting SWNTs. A corroborative investigation of the change in surface work function and the chemical composition of SWNT films, as revealed by X-ray photoelectron spectroscopy, is provided to support these conclusions and to give new perspective to the formation of electronically homogeneous SWNT networks.
在本报告中,我们描述了沉积态、退火态和化学处理态的单壁碳纳米管(SWNT)薄膜的光学和电子性质,这些薄膜表现出金属或半导体行为。沉积态和退火态的半导体 SWNT 薄膜的导电性明显低于金属 SWNT 薄膜;然而,化学处理半导体 SWNT 薄膜可使方阻值低至 60 Ω/sq,相比之下,经过类似处理的金属 SWNT 薄膜的方阻值为 76 Ω/sq。我们得出结论,在半导体 SWNT 薄膜中观察到的电导率的更大改善归因于金属和半导体 SWNTs 之间可用电子态密度的差异。我们提供了 X 射线光电子能谱(XPS)对 SWNT 薄膜表面功函数和化学成分变化的佐证研究,以支持这些结论,并为形成电子均匀的 SWNT 网络提供新的视角。