UV light emission from GZO/ZnO/GaN heterojunction diodes with carrier confinement layers.

In this work, GZO/ZnO/GaN diodes with the light emitting ZnO layer sandwiched between two SiO(2) thin films was fabricated and characterized. We observed a strong excitonic emission at the wavelength 377nm with the Mg(2+) deep level transition and oxygen vacancy induced recombination significantly suppressed. In comparison, light emission from the GZO/GaN device (without SiO(2) barriers) is mainly dominant by defect radiation. Furthermore, the device with confinement layers demonstrated a much higher UV intensity than the blue-green emission of the GZO/GaN p-n device.