Ke Min-Yung, Lu Tzu-Chun, Yang Sheng-Chieh, Chen Cheng-Pin, Cheng Yun-Wei, Chen Liang-Yi, Chen Cheng-Ying, He Jr-Hau, Huang JianJang
Graduate Institute of Photonics and Optoelectronics, National Taiwan University, 1, Roosevelt Road, Sec. 4,Taipei,106 Taiwan.
Opt Express. 2009 Dec 7;17(25):22912-7. doi: 10.1364/OE.17.022912.
In this work, GZO/ZnO/GaN diodes with the light emitting ZnO layer sandwiched between two SiO(2) thin films was fabricated and characterized. We observed a strong excitonic emission at the wavelength 377nm with the Mg(2+) deep level transition and oxygen vacancy induced recombination significantly suppressed. In comparison, light emission from the GZO/GaN device (without SiO(2) barriers) is mainly dominant by defect radiation. Furthermore, the device with confinement layers demonstrated a much higher UV intensity than the blue-green emission of the GZO/GaN p-n device.
在这项工作中，制备并表征了发光ZnO层夹在两层SiO(2)薄膜之间的GZO/ZnO/GaN二极管。我们观察到在波长377nm处有强烈的激子发射，其中Mg(2+)深能级跃迁和氧空位诱导的复合被显著抑制。相比之下，GZO/GaN器件（无SiO(2)势垒）的发光主要由缺陷辐射主导。此外，具有限制层的器件表现出比GZO/GaN p-n器件的蓝绿色发射高得多的紫外强度。
