Choi Yong-Seok, Kang Jang-Won, Kim Byeong-Hyeok, Na Dong-Keun, Lee Sang-Jun, Park Seong-Ju
School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, South Korea.
Opt Express. 2013 May 20;21(10):11698-704. doi: 10.1364/OE.21.011698.
We report on the effect of a p-type MgZnO electron blocking layer (EBL) on the electroluminescence from n-type ZnO/undoped ZnO/p-type ZnO light-emitting diodes (LEDs). The p-type Mg(0.1)Zn(0.9)O EBL was introduced between the undoped and p-type ZnO layers. The p-type Mg(0.1)Zn(0.9)O EBL increased the ultraviolet emission by 140% at 60 mA and decreased the broad deep-level emission from ZnO LEDs. The calculated band structures and carrier distribution in ZnO LEDs show that p-type Mg(0.1)Zn(0.9)O EBL effectively suppresses the electron overflow from undoped ZnO to p-type ZnO and increases the hole concentration in the undoped ZnO layer.
我们报道了p型MgZnO电子阻挡层（EBL）对n型ZnO/未掺杂ZnO/p型ZnO发光二极管（LED）电致发光的影响。在未掺杂的ZnO层和p型ZnO层之间引入了p型Mg(0.1)Zn(0.9)O EBL。p型Mg(0.1)Zn(0.9)O EBL在60 mA时使紫外发射增加了140%，并减少了ZnO LED的宽带深能级发射。对ZnO LED中计算得到的能带结构和载流子分布表明，p型Mg(0.1)Zn(0.9)O EBL有效地抑制了电子从未掺杂的ZnO向p型ZnO的溢出，并增加了未掺杂ZnO层中的空穴浓度。
