Elfström D, Guilhabert B, McKendry J, Poland S, Gong Z, Massoubre D, Richardson E, Rae B R, Valentine G, Blanco-Gomez G, Gu E, Cooper J M, Henderson R K, Dawson M D
Institute of Photonics, University of Strathclyde, Glasgow G4 0NW, UK.
Opt Express. 2009 Dec 21;17(26):23522-9. doi: 10.1364/OE.17.023522.
We report on an approach to ultraviolet (UV) photolithography and direct writing where both the exposure pattern and dose are determined by a complementary metal oxide semiconductor (CMOS) controlled micro-pixellated light emitting diode array. The 370 nm UV light from a demonstrator 8 x 8 gallium nitride micro-pixel LED is projected onto photoresist covered substrates using two back-to-back microscope objectives, allowing controlled demagnification. In the present setup, the system is capable of delivering up to 8.8 W/cm2 per imaged pixel in circular spots of diameter approximately 8 microm. We show example structures written in positive as well as in negative photoresist.
我们报告了一种用于紫外（UV）光刻和直接写入的方法，其中曝光图案和剂量均由互补金属氧化物半导体（CMOS）控制的微像素发光二极管阵列确定。来自一个演示用的8×8氮化镓微像素发光二极管发出的370纳米紫外光，通过两个背对背的显微镜物镜投射到覆盖有光刻胶的基板上，从而实现可控的缩小倍率。在当前设置中，该系统能够在直径约8微米的圆形光斑中，为每个成像像素提供高达8.8瓦/平方厘米的功率。我们展示了用正性光刻胶和负性光刻胶写入的示例结构。
