Electrical Engineering, California Institute of Technology, Pasadena, CA 91125, USA.
Nanotechnology. 2010 Feb 10;21(6):065202. doi: 10.1088/0957-4484/21/6/065202. Epub 2010 Jan 8.
In this paper, we present recent progress in the growth, modelling, fabrication and characterization of gallium arsenide (GaAs) two-dimensional (2D) photonic-crystal slab cavities with embedded indium arsenide (InAs) quantum dots (QDs) that are designed for cavity quantum electrodynamics (cQED) experiments. Photonic-crystal modelling and device fabrication are discussed, followed by a detailed discussion of different failure modes that lead to photon loss. It is found that, along with errors introduced during fabrication, other significant factors such as the presence of a bottom substrate and cavity axis orientation with respect to the crystal axis, can influence the cavity quality factor (Q). A useful diagnostic tool in the form of contour finite-difference time domain (FDTD) is employed to analyse device performance.
在本文中，我们介绍了砷化镓（GaAs）二维（2D）光子晶体平板腔的生长、建模、制作和特性研究的最新进展，这些腔体内嵌入了铟砷（InAs）量子点（QDs），旨在进行腔量子电动力学（cQED）实验。我们讨论了光子晶体的建模和器件制作，然后详细讨论了导致光子损耗的不同失效模式。结果发现，除了制作过程中引入的误差外，其他重要因素，如底部衬底的存在以及相对于晶体轴的腔轴方向，都会影响腔的品质因数（Q）。我们采用了一种有用的轮廓有限差分时域（FDTD）诊断工具来分析器件性能。
