Gong Yiyang, Ellis Bryan, Shambat Gary, Sarmiento Tomas, Harris James S, Vuckovic Jelena
Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA.
Opt Express. 2010 Apr 26;18(9):8781-9. doi: 10.1364/OE.18.008781.
The lasing behavior of one dimensional GaAs nanobeam cavities with embedded InAs quantum dots is studied at room temperature. Lasing is observed throughout the quantum dot PL spectrum, and the wavelength dependence of the threshold is calculated. We study the cavity lasers under both 780 nm and 980 nm pump, finding thresholds as low as 0.3 microW and 19 microW for the two pump wavelengths, respectively. Finally, the nanobeam cavity laser wavelengths are tuned by up to 7 nm by employing a fiber taper in near proximity to the cavities. The fiber taper is used both to efficiently pump the cavity and collect the cavity emission.
在室温下研究了嵌入InAs量子点的一维GaAs纳米束腔的激光行为。在整个量子点PL光谱中观察到激光发射,并计算了阈值的波长依赖性。我们研究了在780 nm和980 nm泵浦下的腔激光器,发现两种泵浦波长下的阈值分别低至0.3微瓦和19微瓦。最后,通过在靠近腔的位置使用光纤锥度,将纳米束腔激光器的波长调谐了高达7 nm。光纤锥度既用于有效地泵浦腔,又用于收集腔的发射光。