Department of Materials Science and Engineering, Yonsei University, Seoul, Korea.
Nano Lett. 2010 Mar 10;10(3):1016-21. doi: 10.1021/nl904190y.
In order for recently developed advanced nanowire (NW) devices(1-5) to be produced on a large scale, high integration of the separately fabricated nanoscale devices into intentionally organized systems is indispensible. We suggest a unique fabrication route for semiconductor NW electronics. This route provides a high yield and a large degree of freedom positioning the device on the substrate. Hence, we can achieve not only a uniform performance of Si NW devices with high fabrication yields, suppressing device-to-device variation, but also programmable integration of the NWs. Here, keeping pace with recent progress of direct-writing circuitry,(6-8) we show the flexibility of our approach through the individual integrating, along with the three predesigned N-shaped sites. On each predesigned site, nine bottom gate p-type Si NW field-effect transistors classified according to their on-current level are programmably integrated.
为了使最近开发的先进纳米线（NW）器件（1-5）能够大规模生产，将单独制造的纳米级器件高度集成到有意组织的系统中是必不可少的。我们提出了一种用于半导体 NW 电子学的独特制造途径。该途径提供了高产量和在衬底上定位器件的较大自由度。因此，我们不仅可以实现具有高制造产量的 SiNW 器件的均匀性能，抑制器件间的变化，而且还可以对 NW 进行可编程集成。在这里，我们紧跟直接写入电路的最新进展，（6-8）通过单独集成以及三个预先设计的 N 形站点展示了我们方法的灵活性。在每个预先设计的站点上，根据其导通电流水平对九个底部栅极 p 型 SiNW 场效应晶体管进行了可编程集成。
