Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea.
ACS Nano. 2010 Feb 23;4(2):811-8. doi: 10.1021/nn9014246.
We demonstrated a controllable tuning of the electronic characteristics of ZnO nanowire field effect transistors (FETs) using a high-energy proton beam. After a short proton irradiation time, the threshold voltage shifted to the negative gate bias direction with an increase in the electrical conductance, whereas the threshold voltage shifted to the positive gate bias direction with a decrease in the electrical conductance after a long proton irradiation time. The electrical characteristics of two different types of ZnO nanowires FET device structures in which the ZnO nanowires are placed on the substrate or suspended above the substrate and photoluminescence (PL) studies of the ZnO nanowires provide substantial evidence that the experimental observations result from the irradiation-induced charges in the bulk SiO(2) and at the SiO(2)/ZnO nanowire interface, which can be explained by a surface-band-bending model in terms of gate electric field modulation. Our study on the proton-irradiation-mediated functionalization can be potentially interesting not only for understanding the proton irradiation effects on nanoscale devices, but also for creating the property-tailored nanoscale devices.
我们利用高能质子束演示了对氧化锌纳米线场效应晶体管（FET）的电子特性的可控调节。经过短时间的质子辐照后，随着电导率的增加，阈值电压向负栅偏压方向移动，而经过长时间的质子辐照后，随着电导率的降低，阈值电压向正栅偏压方向移动。两种不同类型的 ZnO 纳米线 FET 器件结构中 ZnO 纳米线放置在衬底上或悬于衬底上方的电特性，以及 ZnO 纳米线的光致发光（PL）研究提供了充分的证据，表明实验观察结果来自于体 SiO2 和 SiO2/ZnO 纳米线界面中的辐照诱导电荷，这可以用栅极电场调制的表面能带弯曲模型来解释。我们对质子辐照介导的功能化的研究不仅对于理解质子辐照对纳米尺度器件的影响具有潜在的意义，而且对于创建具有定制特性的纳米尺度器件也具有意义。
