Talneau Anne, Lemarchand Fabien, Fehrembach Anne-Laure, Sentenac Anne
CNRS-Laboratoire de Photonique et de Nanostructures, Route de Nozay, F- 91460 Marcoussis, France.
Appl Opt. 2010 Feb 1;49(4):658-62. doi: 10.1364/AO.49.000658.
We investigated the impact of electron-beam lithography writing imperfections on the performance of two-dimensional resonant grating notch filters. This large area photonic device provides an interesting benchmark to assess the acceptable limits of unavoidable fabrication errors. We found that field stitching errors up to 100 nm have no detrimental effect on the filter linewidth, whereas a 2.5 nm electron-beam writing resolution, responsible for digitization disorder, is tolerable only for high-index contrast filter designs. Such an electron-beam writing strategy could also be beneficial for photonic crystal guiding structures or any periodic nanopatterned device with which the optical mode interacts with a large number of periodic elementary units.
我们研究了电子束光刻写入缺陷对二维共振光栅陷波滤波器性能的影响。这种大面积光子器件为评估不可避免的制造误差的可接受限度提供了一个有趣的基准。我们发现，高达100 nm的场拼接误差对滤波器线宽没有不利影响，而负责数字化无序的2.5 nm电子束写入分辨率仅对于高折射率对比度滤波器设计是可容忍的。这种电子束写入策略对于光子晶体波导结构或光学模式与大量周期性基本单元相互作用的任何周期性纳米图案化器件也可能是有益的。
