通过高折射率相位掩膜浸没光刻技术制作的100纳米周期光栅。
100 nm period grating by high-index phase-mask immersion lithography.
作者信息
Bourgin Yannick, Jourlin Yves, Parriaux Olivier, Talneau Anne, Tonchev Svetlen, Veillas Colette, Karvinen Petri, Passilly Nicolas, Md Zain Ahmad R, De La Rue Richard M, Van Erps Jürgen, Troadec David
机构信息
Université de Lyon, Laboratoire Hubert Curien, UMR CNRS 5516, Saint-Etienne, France.
出版信息
Opt Express. 2010 May 10;18(10):10557-66. doi: 10.1364/OE.18.010557.
The interferogram of a high index phase mask of 200 nm period under normal incidence of a collimated beam at 244 nm wavelength with substantially suppressed zeroth order produces a 100 nm period grating in a resist film under immersion. The paper describes the phase mask design, its fabrication, the effect of electron-beam lithographic stitching errors and optical assessment of the fabricated sub-cutoff grating.
在244nm波长的准直光束正入射且零级衍射被大幅抑制的情况下，周期为200nm的高折射率相位掩膜的干涉图在浸没条件下在抗蚀剂膜中产生了周期为100nm的光栅。本文描述了相位掩膜的设计、制作、电子束光刻拼接误差的影响以及对所制作的亚截止光栅的光学评估。
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