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硅光电二极管运算放大器组合的噪声与频率响应

Noise and frequency response of silicon photodiode operational amplifier combination.

作者信息

Hamstra R H, Wendland P

出版信息

Appl Opt. 1972 Jul 1;11(7):1539-47. doi: 10.1364/AO.11.001539.

Abstract

The noise in dark and illuminated Schottky barrier and diffused PIN non-guard-ring photodiodes has been measured between 0.1 Hz and 10 kHz and compared to theory with an excellent fit. It is shown that diodes used photovoltaically are free of 1/f noise in the dark. It is also demonstrated that there is an optimum bias (ca. 100 mV) for minimum noise equivalent power. When only a resistive load is used with a detector, it often determines the frequency response and noise of the detector circuit. We develop and demonstrate equations for the major improvements in both noise and frequency response that can be obtained using a current mode (inverting) operational amplifier.

摘要

在0.1赫兹至10千赫兹之间测量了黑暗和光照条件下肖特基势垒二极管以及扩散PIN无保护环光电二极管的噪声,并与理论进行了比较,拟合效果极佳。结果表明,光伏使用的二极管在黑暗中没有1/f噪声。还证明了存在一个使噪声等效功率最小的最佳偏置(约100毫伏)。当探测器仅使用电阻性负载时,它通常会决定探测器电路的频率响应和噪声。我们推导并证明了使用电流模式(反相)运算放大器可在噪声和频率响应方面实现重大改进的方程。

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