Okuda M, Matsushita T, Yamagami T, Yamamoto K
Appl Opt. 1974 Apr 1;13(4):799-802. doi: 10.1364/AO.13.000799.
The light-induced memory effect in amorphous selenium films is studied by fabricating them into a sort of heterojunction (Se-SnO(2)) so as to be able to apply the bias voltage together with the laser beam irradiation for memory. Under the reverse bias voltage, a region of high electric field is formed in the selenium film near the junction. Remarkable enhancement in the photo-induced image spot is achieved if an appropriate bias voltage is applied simultaneously, indicating the sensitization of the memory effect due to the photocurrent induced by the high electric field in the selenium film.
通过将非晶硒薄膜制成一种异质结（Se-SnO₂）来研究其光致记忆效应，以便能够在激光束照射时施加偏置电压用于记忆。在反向偏置电压下，在结附近的硒薄膜中形成一个高电场区域。如果同时施加适当的偏置电压，光致图像光斑会有显著增强，这表明由于硒薄膜中高电场感应的光电流导致记忆效应的敏化。
