Institute of Chemistry, Academia Sinica, Taipei, Taiwan.
ACS Appl Mater Interfaces. 2010 Nov;2(11):3231-40. doi: 10.1021/am100696v. Epub 2010 Oct 28.
Composite films of pentacene and poly(10,12-pentacosadiynoic acid) were prepared and used as the active channel material in a top-contact, bottom-gate field-effect transistor. The transistors exhibited high field-effect mobility as well as large I-V hysteresis as a function of gate bias history. The polydiacetylenic moieties incorporated in the pentacene film served as charge storage vehicles, which affected the threshold voltage shifts and created the electric bistability needed in a memory device. The memory window, response, and retention highly depend on the morphology of the polydiacetylene film buried under. Detailed film structure analyses and correlation with the transistor/memory property are provided.
五嵌苯和聚（10,12-二十五碳二炔酸）的复合膜被制备出来，并被用作顶接触、底栅场效应晶体管中的活性沟道材料。晶体管表现出高场效应迁移率以及大的 I-V 滞后作为栅极偏压历史的函数。在五嵌苯膜中掺入的聚二乙酰亚胺部分充当电荷存储载体，这影响了阈值电压的变化，并在存储器件中产生了所需的电双稳性。存储窗口、响应和保持时间高度依赖于埋藏在下面的聚二乙酰亚胺膜的形态。提供了详细的薄膜结构分析以及与晶体管/存储器性能的相关性。
