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直边结构和可调锥度结构的玻璃衬底湿法刻蚀。

Wet-etching of structures with straight facets and adjustable taper into glass substrates.

机构信息

Biomedical Engineering Department, McGill University, Montreal, Quebec, Canada H3A 1A4.

出版信息

Lab Chip. 2010 Feb 21;10(4):494-8. doi: 10.1039/b912770d. Epub 2009 Dec 1.

Abstract

Wet etching of glass by hydrofluoric acid is widely used in microfabrication, but is limited by the isotropic nature of the process that leads to rounded sidewalls and a 90 degrees angle between the etch front and the surface of the substrate. For many applications such as microvalving, or for further processing such as spin-coating, well controlled, gently sloping sidewalls are often preferred. Here, we present a new approach for forming straight facets and for adjusting the sidewall angle in wet-etched glass substrates by controlling the lateral dissolution of an etch mask during etching. The etch mask comprises a Ti-Au bilayer where Au serves to protect the Ti. During isotropic etching of glass by HF the Ti layer is etched away laterally at the same time, which leads to straight, gently sloping sidewalls. We introduce two methods for controlling the sidewall angle. The first one is based on adjusting the thickness of Ti which controls the lateral etch rate, and thus the angle; the thinner the Ti, the slower its lateral etch rate and the steeper the angle in the etched glass. The second method involves a cathodic bias applied to the Ti-Au etch mask which again regulates the dissolution rate of Ti; the more negative the bias the slower the lateral etch rate. Both methods offer accurate control of the sidewall angle over a wide range, can be readily integrated into existing fabrication processes, and will be particularly useful for making channels with trapezoidal cross-sections, valve seats with gentle profiles, or for patterning electrodes across and inside of microfluidic channels.

摘要

氢氟酸湿法刻蚀在微加工中被广泛应用,但由于刻蚀过程的各向同性,导致侧壁呈圆形,刻蚀前沿与基底表面之间的夹角为 90 度。对于许多应用,例如微阀,或者对于进一步的处理,例如旋涂,通常更喜欢具有良好控制的、倾斜平缓的侧壁。在这里,我们提出了一种新的方法,通过控制湿法刻蚀过程中刻蚀掩模的横向溶解,在湿刻蚀玻璃基底中形成直的刻面和调整侧壁角度。刻蚀掩模由 Ti-Au 双层组成,其中 Au 用于保护 Ti。在 HF 对玻璃的各向同性刻蚀过程中,Ti 层同时在横向被刻蚀掉,从而形成直的、倾斜平缓的侧壁。我们介绍了两种控制侧壁角度的方法。第一种方法基于调整 Ti 的厚度来控制横向刻蚀速率,从而控制角度;Ti 越薄,其横向刻蚀速率越慢,刻蚀后玻璃的角度越陡。第二种方法涉及对 Ti-Au 刻蚀掩模施加阴极偏压,这再次调节 Ti 的溶解速率;偏压越负,横向刻蚀速率越慢。这两种方法都可以在很宽的范围内精确控制侧壁角度,可以很容易地集成到现有的制造工艺中,对于制作具有梯形横截面的通道、具有平缓轮廓的阀座或在微流道内外图案化电极将特别有用。

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