NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa, Japan.
Nanotechnology. 2010 Mar 5;21(9):095607. doi: 10.1088/0957-4484/21/9/095607. Epub 2010 Feb 8.
We report parallel aligned GaAs nanowires (NWs) with 110 orientation laterally grown on [311]B substrates via the vapor-liquid-solid mode and demonstrate their controllability and growth mechanism. We control the size, density, and site of the lateral NWs by using size- and density-selective Au colloidal particles and Au dot arrays defined by electron-beam lithography. The lateral NWs grow only along the [110] and [Formula: see text] directions and formation of the stable facets of (111)B and (001) on the sides of the lateral NWs is crucial for lateral NW growth. We clarify the growth mechanism by comparing the growth results on [311]B, (311)A, and (001) substrates and the surface energy change of lateral and freestanding NWs.
我们通过汽-液-固模式报告了沿[311]B 衬底侧向生长的具有 110 取向的平行排列 GaAs 纳米线（NWs），并展示了它们的可控性和生长机制。我们通过使用尺寸和密度选择性的 Au 胶体颗粒和电子束光刻定义的 Au 点阵列来控制侧向 NW 的尺寸、密度和位置。侧向 NW 仅沿着[110]和[Formula: see text]方向生长，并且侧向 NW 侧面稳定的（111）B 和（001）晶面的形成对于侧向 NW 生长至关重要。我们通过比较在[311]B、（311）A 和（001）衬底上的生长结果以及侧向和自由-standing NW 的表面能变化，阐明了生长机制。
