Quitoriano Nathaniel J, Wu Wei, Kamins Theodore I
Information and Quantum Systems Laboratory, Hewlett-Packard Laboratories, Palo Alto, CA 94304, USA.
Nanotechnology. 2009 Apr 8;20(14):145303. doi: 10.1088/0957-4484/20/14/145303. Epub 2009 Mar 17.
Vapor-liquid-solid (VLS) grown nanowires (NWs) typically grow in [Formula: see text] directions. In this work, using guiding structures, we effectively grow Si NWs with diameters between 20 and 100 nm in both [001] and <110> directions by guiding the Si NW growth using SiO(2) surfaces. Using one structure, we demonstrate NW growth in the substrate plane, against the buried oxide layer of a standard, (001) silicon-on-insulator wafer. Using the other structure, we demonstrate NW growth perpendicular to a (001) substrate. We show that the VLS growth mechanism is the same as unconstrained NW growth, with the NWs still growing by the addition of {111} planes. We show that when the guiding surface is removed, the NW grows in its natural growth direction because the growth mechanism has not changed. We speculate that NW growth can be guided with a range of materials, the most suitable being those that are amorphous and those which are nearly immiscible both with the catalyst and with the NW material.
气-液-固（VLS）生长的纳米线（NWs）通常沿[公式：见正文]方向生长。在这项工作中，我们使用导向结构，通过利用SiO₂表面引导硅纳米线生长，在[001]和<110>方向上有效地生长了直径在20至100纳米之间的硅纳米线。使用一种结构，我们展示了在衬底平面内，与标准的（001）绝缘体上硅晶圆的掩埋氧化物层相对的纳米线生长。使用另一种结构，我们展示了垂直于（001）衬底的纳米线生长。我们表明，VLS生长机制与无约束的纳米线生长相同，纳米线仍然通过添加{111}面来生长。我们表明，当去除导向表面时，纳米线会沿其自然生长方向生长，因为生长机制没有改变。我们推测，纳米线生长可以用一系列材料来引导，最合适的是那些非晶态的材料以及那些与催化剂和纳米线材料几乎不混溶的材料。
