Leibniz Institute for Solid State and Materials Research, D-01069 Dresden, Germany.
Nano Lett. 2010 Mar 10;10(3):992-5. doi: 10.1021/nl904115h.
The outstanding properties of graphene, a single graphite layer, render it a top candidate for substituting silicon in future electronic devices. The so far exploited synthesis approaches, however, require conditions typically achieved in specialized laboratories and result in graphene sheets whose electronic properties are often altered by interactions with substrate materials. The development of graphene-based technologies requires an economical fabrication method compatible with mass production. Here we demonstrate for the fist time the feasibility of graphene synthesis on commercially available cubic SiC/Si substrates of >300 mm in diameter, which result in graphene flakes electronically decoupled from the substrate. After optimization of the preparation procedure, the proposed synthesis method can represent a further big step toward graphene-based electronic technologies.
石墨烯是单层石墨，具有出色的性能，有望在未来的电子设备中取代硅。然而，迄今为止已开发的合成方法需要在专门实验室中才能达到的条件，并且得到的石墨烯片的电子性能往往会因与衬底材料的相互作用而发生改变。基于石墨烯的技术的发展需要一种与大规模生产兼容的经济制造方法。在这里，我们首次证明了在商业上可获得的直径大于 300 毫米的立方 SiC/Si 衬底上合成石墨烯的可行性，这导致石墨烯片与衬底电子分离。在优化制备程序后，所提出的合成方法可能是迈向基于石墨烯的电子技术的又一大步。
