Department of Chemical & Biological Engineering, University of Wisconsin, Madison WI 53706, USA.
Biomaterials. 2010 May;31(14):4064-72. doi: 10.1016/j.biomaterials.2010.01.101. Epub 2010 Feb 11.
The basement membrane of the human corneal epithelium comprises topographic features including fibers, pores, and elevations with feature dimensions on the order of 20-400 nm. Understanding the impact of sub-micron and nanotopography on corneal cell behavior will contribute to our understanding of biomechanical cues and will assist in the design of improved synthetic corneal implants. We utilized well defined ridge and groove wave-like nanostructures (wave ordered structures, WOS) of 60-140 pitches (30-70 nm ridge widths) and 200 nm depths to assess human corneal epithelial cell (HCEC) contact guidance and to establish HCEC contact acuity defined as the lower limit in feature dimensions at which cells respond to biomimetic topographic cues. Results using the WOS substrates demonstrate that HCEC contact acuity is in the range of 60 nm pitch for cells in a serum-free basal medium (EpiLife) and in the range of 90 nm pitch for cells in epithelial medium. To further investigate the influence of HCEC contact acuity in the presence of larger topographic cues, we fabricated 70 nm pitch WOS-overlaid parallel to the top of the ridges of 800-4000 nm pitch. HCEC cultured in epithelial medium demonstrate a significant increase in the percent of cells aligning to 4000 nm pitch topography with WOS-overlay compared to controls (both flat and 70 nm WOS alone) and 4000 nm pitch topography alone. These results highlight the significance of the lower range of basement membrane scale topographic cues on cell response and allow for improved prosthetic design.
人眼角膜上皮的基底膜具有形貌特征,包括纤维、孔隙和隆起,其特征尺寸约为 20-400nm。了解亚微米和纳米形貌对角膜细胞行为的影响,有助于我们理解生物力学线索,并有助于设计改进的合成角膜植入物。我们利用具有明确形貌的脊和槽波状纳米结构(有序结构波,WOS),其节距为 60-140nm(脊宽 30-70nm),深度为 200nm,以评估人眼角膜上皮细胞(HCEC)的接触导向,并建立 HCEC 接触敏锐度,即细胞对仿生形貌线索做出响应的特征尺寸下限。使用 WOS 基底的结果表明,在无血清基础培养基(EpiLife)中,HCEC 的接触敏锐度范围在 60nm 节距,而在上皮培养基中,接触敏锐度范围在 90nm 节距。为了进一步研究在存在较大形貌线索时 HCEC 接触敏锐度的影响,我们制造了与 800-4000nm 节距脊顶平行的 70nm 节距 WOS 覆盖层。与对照组(包括平面和单独的 70nm WOS)和单独的 4000nm 节距形貌相比,在上皮培养基中培养的 HCEC 显著增加了与 4000nm 节距形貌具有 WOS 覆盖层的细胞对齐的百分比。这些结果突出了基底膜尺度形貌线索的较低范围对细胞反应的重要性,并允许改进假体设计。