Hill B, Krumme J P, Much G, Pepperl R, Schmidt J, Schmidt K P, Witter K, Heitmann H
Appl Opt. 1975 Nov 1;14(11):2607-13. doi: 10.1364/AO.14.002607.
A random access optical memory for write-read-write operation is proposed. The memory is designed on the basis of a nonvolatile magnetooptic photoconductor sandwich storage material (MOPS) that offers high optical sensitivity. The optical addressing part of the memory consists of an He-Ne laser, digital light deflection combined with passive beam splitting and simple optics. The addressing is organized in blocks of about 10(3) bits. First experimental results measured at a system model being developed in our laboratory are presented, as well as results of storage experiments at a magnetooptic photoconductor sandwich.