Department of Display and Semiconductor Physics, Sejong Campus, Korea University, Chungnam-Do 339-800, Republic of Korea.
Nanotechnology. 2010 Mar 12;21(10):105204. doi: 10.1088/0957-4484/21/10/105204. Epub 2010 Feb 16.
We report on the electrical characteristics of few-layer graphene (FLG) field-effect devices with their various thicknesses. In combination with a ferroelectric polymer layer of poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)], FLG/ferroelectric devices exhibited nonvolatile resistance changes due to a polarization switching of the P(VDF/TrFE) layer. The bistability and retention properties were highly sensitive to the FLG thickness, which is attributed to a charge screening effect in FLG films.
我们报告了具有不同厚度的少层石墨烯 (FLG) 场效应器件的电学特性。与聚偏二氟乙烯/三氟乙烯共聚物 (P(VDF/TrFE)) 的铁电聚合物层相结合，FLG/铁电器件由于 P(VDF/TrFE) 层的极化切换而表现出非易失性电阻变化。双稳和保持特性对 FLG 厚度非常敏感，这归因于 FLG 薄膜中的电荷屏蔽效应。
