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提高聚偏氟乙烯-三氟乙烯(P(VDF-TrFE))在有机存储器件中的铁电切换特性。

Enhanced ferroelectric switching characteristics of P(VDF-TrFE) for organic memory devices.

机构信息

School of Material Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue Block N4.1, Singapore 639798.

出版信息

J Phys Chem B. 2010 Oct 28;114(42):13289-93. doi: 10.1021/jp105249f.

DOI:10.1021/jp105249f
PMID:20925352
Abstract

In the following work, we report an approach to shorten the ferroelectric switching time of P(VDF-TrFE) film by blending with as-synthesized gold nanoparticles. Ferroelectric hysteresis measurements give remnant polarization and coercive field of 8 μC/cm(2) and 50 MV/m, respectively. A series of electric pulses was applied for the characterization of ferroelectric polymers, and the switching time response was evaluated. More than 3 orders of magnitude reduction in switching time is observed for the polymer film blended with nanoparticles of the amount 1 × 10(-6) wt %. The observed switching enhancements are discussed in terms of improved alignment of the ferroelectric crystal plane in the presence of the gold nanoparticles, whereby the aligned crystal planes experience a stronger effective field compared to the randomly oriented planes in pristine P(VDF-TrFE).

摘要

在下面的工作中,我们报告了一种通过与合成的金纳米粒子共混来缩短 P(VDF-TrFE) 薄膜铁电开关时间的方法。铁电滞后测量给出了 8 μC/cm(2)和 50 MV/m 的剩余极化和矫顽场。施加一系列电脉冲以对铁电聚合物进行特性化,并且评估了开关时间响应。与未掺杂纳米粒子的聚合物薄膜相比,掺杂量为 1×10(-6)wt%的聚合物薄膜的开关时间响应降低了 3 个数量级以上。观察到的开关增强是通过在金纳米粒子存在下改善铁电晶体平面的取向来讨论的,其中与原始 P(VDF-TrFE)中随机取向的平面相比,取向的晶体平面经历更强的有效场。

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Temperature dependence of piezo- and ferroelectricity in ultrathin P(VDF-TrFE) films.超薄聚偏氟乙烯-三氟乙烯(P(VDF-TrFE))薄膜中压电性和铁电性的温度依赖性。
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Ferroelectric Switching of Vinylidene and Trifluoroethylene Copolymer Thin Films on Au Electrodes Modified with Self-Assembled Monolayers.
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