Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
Langmuir. 2010 May 4;26(9):6853-9. doi: 10.1021/la904170w.
This article presents a novel application of using dip-pen nanolithography (DPN) to fabricate Au electrodes concurrently in a high-throughput fashion through an etch resist. We have fabricated 26 pairs of electrodes, where cleanly etched electrode architectures, along with a high degree of feature-size controllability and tip-to-tip uniformity, were observed. Moreover, electrode gaps in the sub-100-nm regime have been successfully fabricated. Conductivity measurements of multiple electrodes in the array were all comparable to that of bulk Au, confirming the reliability and the low-resistance property of the electrodes. Finally, as a demonstration of electrode functionality, SWNT devices were fabricated and the electrical properties of an SWNT device were measured. Hence, our experimental results validate DPN as an effective tool in generating high-quality electrodes in a parallel manner with mild, simple processing steps at a relatively low cost.
本文提出了一种新颖的应用,即通过抗蚀剂使用蘸笔纳米光刻(DPN)在高通量下同时制造 Au 电极。我们已经制造了 26 对电极,观察到了干净的刻蚀电极结构,以及高度的特征尺寸可控性和尖端到尖端的均匀性。此外,还成功制造了亚 100nm 间隙的电极。对该阵列中多个电极的电导率测量结果均与块状 Au 的电导率相当,这证实了电极的可靠性和低电阻特性。最后,作为电极功能的演示,制造了 SWNT 器件并测量了 SWNT 器件的电性能。因此,我们的实验结果验证了 DPN 作为一种有效的工具,可以在相对较低的成本下通过温和、简单的处理步骤以并行方式生成高质量的电极。