Sclar N, Maddox R L, Florence R A
Appl Opt. 1977 Jun 1;16(6):1525-32. doi: 10.1364/AO.16.001525.
Impurity doped silicon detector arrays sensitive to long ir wavelengths, based on monolithic processing, were designed and developed. These arrays provide optimized performance utilizing ir transparent detector contacts and reflecting counterelectrodes while minimizing electrical and optical cross talk and providing precise optical definition for the detectors. The microelectronic batch processing procedures are discussed, and the array performance obtained using these procedures is presented. This includes spectral response, the dependence of detectivity on temperature and frequency, the electrical and optical cross talk, and the optical definition obtained. The development is expected to serve as a processing guide for future arrays which will include on-chip signal processing.
基于单片处理技术，设计并开发了对长红外波长敏感的杂质掺杂硅探测器阵列。这些阵列利用红外透明探测器触点和反射对电极提供了优化的性能，同时将电气和光学串扰降至最低，并为探测器提供精确的光学清晰度。讨论了微电子批量处理程序，并展示了使用这些程序获得的阵列性能。这包括光谱响应、探测率对温度和频率的依赖性、电气和光学串扰以及获得的光学清晰度。预计该开发成果将为未来包括片上信号处理的阵列提供处理指导。
