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具有直接带隙和强二次谐波产生的可溶性半导体 AAsSe2(A = Li,Na):实验与理论研究。

Soluble semiconductors AAsSe2 (A = Li, Na) with a direct-band-gap and strong second harmonic generation: a combined experimental and theoretical study.

机构信息

Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA.

出版信息

J Am Chem Soc. 2010 Mar 17;132(10):3484-95. doi: 10.1021/ja9094846.

DOI:10.1021/ja9094846
PMID:20170184
Abstract

AAsSe(2) (A = Li, Na) have been identified as a new class of polar direct-band gap semiconductors. These I-V-VI(2) ternary alkali-metal chalcoarsenates have infinite single chains of (1/infinity)[AsQ(2)(-)] derived from corner-sharing pyramidal AsQ(3) units with stereochemically active lone pairs of electrons on arsenic. The conformations and packing of the chains depend on the structure-directing alkali metals. This results in at least four different structural types for the Li(1-x)Na(x)AsSe(2) stoichiometry (alpha-LiAsSe(2), beta-LiAsSe(2), gamma-NaAsSe(2), and delta-NaAsSe(2)). Single-crystal X-ray diffraction studies showed an average cubic NaCl-type structure for alpha-LiAsSe(2), which was further demonstrated to be locally distorted by pair distribution function (PDF) analysis. The beta and gamma forms have polar structures built of different (1/infinity)[AsSe(2)(-)] chain conformations, whereas the delta form has nonpolar packing. A wide range of direct band gaps are observed, depending on composition: namely, 1.11 eV for alpha-LiAsSe(2), 1.60 eV for LiAsS(2), 1.75 eV for gamma-NaAsSe(2), 2.23 eV for NaAsS(2). The AAsQ(2) materials are soluble in common solvents such as methanol, which makes them promising candidates for solution processing. Band structure calculations performed with the highly precise screened-exchange sX-LDA FLAPW method confirm the direct-gap nature and agree well with experiment. The polar gamma-NaAsSe(2) shows very large nonlinear optical (NLO) second harmonic generation (SHG) response in the wavelength range of 600-950 nm. The theoretical studies confirm the experimental results and show that gamma-NaAsSe(2) has the highest static SHG coefficient known to date, 337.9 pm/V, among materials with band gaps larger than 1.0 eV.

摘要

AAsSe(2)(A=Li,Na)已被确定为一类新的极性直接带隙半导体。这些 I-V-VI(2) 三元碱金属硫代砷酸盐具有无限的(1/无穷大)[AsQ(2)(-)]单链,由顶角共享的三角砷单元形成,砷上具有立体化学活性的孤对电子。链的构象和堆积取决于结构导向的碱金属。这导致 Li(1-x)Na(x)AsSe(2) 化学计量比至少有四种不同的结构类型(α-LiAsSe(2)、β-LiAsSe(2)、γ-NaAsSe(2)和δ-NaAsSe(2))。单晶 X 射线衍射研究表明,α-LiAsSe(2)具有平均立方 NaCl 型结构,通过配对分布函数(PDF)分析进一步证明其局部存在扭曲。β和γ形式具有由不同(1/无穷大)[AsSe(2)(-)]链构象构建的极性结构,而δ形式具有非极性堆积。观察到的直接带隙范围很广,取决于组成:即α-LiAsSe(2)为 1.11 eV,LiAsS(2)为 1.60 eV,γ-NaAsSe(2)为 1.75 eV,NaAsS(2)为 2.23 eV。AAsQ(2)材料可溶于甲醇等常见溶剂,这使其成为溶液处理的有前途的候选者。使用高度精确的筛选交换 sX-LDA FLAPW 方法进行的能带结构计算证实了直接带隙性质,并与实验结果吻合良好。极性γ-NaAsSe(2)在 600-950nm 波长范围内表现出非常大的非线性光学(NLO)二次谐波产生(SHG)响应。理论研究证实了实验结果,并表明γ-NaAsSe(2)具有迄今为止已知的最大静态 SHG 系数,为 337.9 pm/V,在带隙大于 1.0 eV 的材料中。

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