Troudi M, Sghaier Na, Kalboussi A, Souifi A
Institut des Nanotechnologies de Lyon (site INSA UMR 5270), Bât. Blaise Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex, France.
Opt Express. 2010 Jan 4;18(1):1-9. doi: 10.1364/OE.18.000001.
In this paper, we analyzed slow single traps, situated inside the tunnel oxide of small area single electron photo-detector (photo-SET or nanopixel). The relationship between excitation signal (photons) and random-telegraph-signal (RTS) was evidenced. We demonstrated that photoinduced RTS observed on a photo-detector is due to the interaction between single photogenerated charges that tunnel from dot to dot and current path. Based on RTS analysis for various temperatures, gate bias and optical power we determined the characteristics of these single photogenerated traps: the energy position within the silicon bandgap, capture cross section and the position within the Si/SiO(x = 1.5) interfaces.
在本文中，我们分析了位于小面积单电子光电探测器（光单电子晶体管或纳米像素）隧道氧化层内的慢速单陷阱。证实了激发信号（光子）与随机电报信号（RTS）之间的关系。我们证明了在光电探测器上观察到的光致RTS是由于从一个点隧穿到另一个点的单个光生电荷与电流路径之间的相互作用所致。基于对不同温度、栅极偏置和光功率的RTS分析，我们确定了这些单个光生陷阱的特性：硅带隙内的能量位置、俘获截面以及在Si/SiO(x = 1.5)界面内的位置。
