用于片上光网络的宽带无冲击硅电光开关。

Broadband hitless silicon electro-optic switch for on-chip optical networks.

作者信息

Lira Hugo L R, Manipatruni Sasikanth, Lipson Michal

机构信息

School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA.

出版信息

Opt Express. 2009 Dec 7;17(25):22271-80. doi: 10.1364/OE.17.022271.

DOI:10.1364/OE.17.022271

PMID:20052150

Abstract

We report on the demonstration of a broadband (60 GHz), spectrally hitless, compact (20 microm x 40 microm), fast (7 ns) electro-optical switch. The device is composed of two coupled resonant cavities, each with an independently addressable PIN diode. This topology enables operation of the switch without perturbing adjacent channels in a wavelength division multiplexing (WDM) system.

摘要

我们报告了一种宽带（60吉赫兹）、无频谱干扰、紧凑（20微米×40微米）、快速（7纳秒）电光开关的演示。该器件由两个耦合谐振腔组成，每个谐振腔都有一个可独立寻址的PIN二极管。这种拓扑结构使得该开关能够在不干扰波分复用（WDM）系统中相邻信道的情况下运行。