Stievater T H, Park D, Rabinovich W S, Pruessner M W, Kanakaraju S, Richardson C J K, Khurgin J B
Naval Research Laboratory, Washington, DC 20375, USA.
Opt Express. 2010 Jan 18;18(2):885-92. doi: 10.1364/OE.18.000885.
We demonstrate enhanced electro-optic phase shifts in suspended InGaAs/InGaAsP quantum well waveguides compared to attached waveguides. The enhancement stems from an improved overlap between the optical mode and the multiple quantum well layers in thin waveguides when the semiconductor material beneath the waveguide is selectively etched. The measured voltage length product is 0.41 V-cm and the measured propagation loss is 2.3 +/- 0.7 dB/cm for the TE mode in the optical L-band.
与附着的波导相比，我们展示了悬浮的InGaAs/InGaAsP量子阱波导中增强的电光相移。这种增强源于当波导下方的半导体材料被选择性蚀刻时，薄波导中光学模式与多量子阱层之间重叠的改善。对于光学L波段中的TE模式，测得的电压长度积为0.41 V·cm，测得的传播损耗为2.3±0.7 dB/cm。
