绝缘体上硅光子线纳米腔中的全光开关
All-optical switching in silicon-on-insulator photonic wire nano-cavities.
作者信息
Belotti Michele, Galli Matteo, Gerace Dario, Andreani Lucio Claudio, Guizzetti Giorgio, Md Zain Ahmad R, Johnson Nigel P, Sorel Marc, De La Rue Richard M
机构信息
Dipartimento di Fisica A. Volta and UdR CNISM, Università degli Studi di Pavia, Via Bassi 6, Pavia, Italy.
出版信息
Opt Express. 2010 Jan 18;18(2):1450-61. doi: 10.1364/OE.18.001450.
We report on experimental demonstration of all-optical switching in a silicon-on-insulator photonic wire nanocavity operating at telecom wavelengths. The switching is performed with a control pulse energy as low as approximately 0.1 pJ on a cavity device that presents very high signal transmission, an ultra-high quality-factor, almost diffraction-limited modal volume and a footprint of only 5 microm(2). High-speed modulation of the cavity mode is achieved by means of optical injection of free carriers using a nanosecond pulsed laser. Experimental results are interpreted by means of finite-difference time-domain simulations. The possibility of using this device as a logic gate is also demonstrated.
我们报道了在工作于电信波长的绝缘体上硅光子线纳米腔中全光开关的实验演示。该开关在一个具有非常高的信号传输、超高品质因数、几乎衍射极限模态体积且占地面积仅为5平方微米的腔器件上,以低至约0.1皮焦的控制脉冲能量进行。通过使用纳秒脉冲激光进行自由载流子的光注入,实现了腔模的高速调制。实验结果通过时域有限差分模拟进行解释。还展示了将该器件用作逻辑门的可能性。