利用金字塔形SiO₂通过横向外延过生长提高InGaN/GaN发光二极管的光输出功率

Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO(2).

作者信息

Cho Chu-Young, Lee Jin-Bock, Lee Sang-Jun, Han Sang-Heon, Park Tae-Young, Kim Je Won, Kim Yong Chun, Park Seong-Ju

机构信息

Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju, Republic of Korea.

出版信息

Opt Express. 2010 Jan 18;18(2):1462-8. doi: 10.1364/OE.18.001462.

DOI:10.1364/OE.18.001462

PMID:20173974

Abstract

We report on the improvement of light output power of InGaN/GaN blue light-emitting diodes (LEDs) by lateral epitaxial overgrowth (LEO) of GaN using a pyramidal-shaped SiO(2) mask. The light output power was increased by 80% at 20 mA of injection current compared with that of conventional LEDs without LEO structures. This improvement is attributed to an increased internal quantum efficiency by a significant reduction in threading dislocation and by an enhancement of light extraction efficiency by pyramidal-shaped SiO(2) LEO mask.

摘要

我们报道了使用金字塔形SiO₂掩膜通过GaN的横向外延生长（LEO）来提高InGaN/GaN蓝光发光二极管（LED）的光输出功率。与没有LEO结构的传统LED相比，在20 mA注入电流下，光输出功率提高了80%。这种改进归因于通过显著减少位错增加了内部量子效率，以及通过金字塔形SiO₂ LEO掩膜提高了光提取效率。