Department of Electrical and Computer Engineering, McGill University, Montreal, QC, Canada.
Nanotechnology. 2010 Mar 26;21(12):125201. doi: 10.1088/0957-4484/21/12/125201. Epub 2010 Feb 25.
We report on the achievement of planar memristive devices on monocrystalline ZnO substrates using Ti/Al and Pt/Au contacts with dimensions of 100 x 100 microm(2) and spacings of approximately 60 microm. Effects of both thermal and electro-forming processes on the switching characteristics are investigated. It is observed that the thermally formed devices exhibit an extremely large R(OFF)/R(ON) value of approximately 20 000. The electrically formed devices, on the other hand, demonstrate an exceptional switching stability, with R(OFF)/R(ON) variations of < 2% for durations of over 10(5) s and more than 1800 switching cycles. The dependence of the switching characteristics on the formation processes, as well as the metal electrodes, could be explained by an oxygen vacancy formation/annihilation and migration model.
我们报告了在单晶 ZnO 衬底上使用 Ti/Al 和 Pt/Au 接触的平面忆阻器器件的实现，接触的尺寸为 100 x 100 微米，间距约为 60 微米。研究了热和电形成过程对开关特性的影响。观察到热形成的器件表现出约 20000 的极高 R(OFF)/R(ON)值。另一方面，电形成的器件表现出异常的开关稳定性，在超过 10(5) s 和 1800 多个开关循环的时间内，R(OFF)/R(ON)的变化小于 2%。开关特性对形成过程以及金属电极的依赖性可以用氧空位形成/消除和迁移模型来解释。
