金属/掺镧的 BiFeO3/铂夹层中的非易失性电阻开关。

Nonvolatile resistive switching in metal/La-doped BiFeO3/Pt sandwiches.

机构信息

Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Ningbo, People's Republic of China.

出版信息

Nanotechnology. 2010 Oct 22;21(42):425202. doi: 10.1088/0957-4484/21/42/425202. Epub 2010 Sep 22.

DOI:10.1088/0957-4484/21/42/425202

PMID:20858929

Abstract

The resistive switching (RS) characteristics of a Bi(0.95)La(0.05)FeO(3) (La-BFO) film sandwiched between a Pt bottom electrode and top electrodes (TEs) made of Al, Ag, Cu, and Au have been studied. Devices with TEs made of Ag and Cu showed stable bipolar RS behaviors, whereas those with TEs made of Al and Au exhibited unstable bipolar RS. The Ag/La-BFO/Pt structure showed an on/off ratio of 10(2), a retention time > 10(5) s, and programming voltages < 1 V. The RS effect can be attributed to the formation/rupture of nanoscale metal filaments due to the diffusion of the TEs under a bias voltage. The maximum current before the reset process (on-to-off switching) was found to increase linearly with the current compliance applied during the set process (off-to-on switching).

摘要

在底部电极采用 Pt、顶部电极采用 Al、Ag、Cu 和 Au 的结构中，研究了 Bi(0.95)La(0.05)FeO(3)（La-BFO）薄膜的电阻开关（RS）特性。采用 Ag 和 Cu 作为顶部电极的器件表现出稳定的双极 RS 行为，而采用 Al 和 Au 作为顶部电极的器件则表现出不稳定的双极 RS。Ag/La-BFO/Pt 结构的开关比为 10(2)，保持时间 > 10(5) s，编程电压 < 1 V。RS 效应可归因于在偏置电压下 TE 的扩散导致纳米级金属丝的形成/断裂。在复位过程（从导通到关断切换）之前的最大电流发现与在设置过程（从关断到导通切换）中施加的电流限制呈线性关系。