Gondé C, Bureau H, Burchard M, Henry S, Simon G, Meijer J, Kubsky S
Laboratoire Pierre Sue, UMR 9956 CEA-CNRS, CEA Saclay, Gif-sur-Yvette 91191, France.
Rev Sci Instrum. 2010 Feb;81(2):023902. doi: 10.1063/1.3274812.
This study is devoted to in situ temperature measurement in diamond anvil cells (DACs) with intelligent anvils (i-anvils). I-anvils consist of diamonds implanted with B and/or C ions, situated below the diamond's surface at a depth of 1-3 microm; forming sensors which are placed below the culet at the location of the DAC's sample chamber. I-anvils can be employed as temperature or pressure sensors, exploiting their electrical properties. We have tested the sensor's behavior with temperatures up to 900 degrees C, at ambient pressure and up to 6 GPa in real experimental conditions in two types of DAC. For this purpose, we performed experiments in four different i-anvils at temperatures up to 900 degrees C. We have compared the signal measured by the sensors with the temperature measured by a thermocouple attached to the i-anvil. The temperature gradient between the sample chamber and the thermocouple position was taken into account by phase transition measurements of calibration standards. Reproducible laws of current variation with temperature have been established. We conclude that i-anvils are reliable and sensitive to measure the temperature in-situ in DACs with an accuracy of better than 1 degree C.
本研究致力于利用智能砧座(i - 砧座)在金刚石对顶砧(DAC)中进行原位温度测量。i - 砧座由注入了硼和/或碳离子的金刚石组成,这些离子位于金刚石表面下方1 - 3微米深处;形成的传感器放置在DAC样品腔位置的尖底下方。i - 砧座可利用其电学特性用作温度或压力传感器。我们在两种类型的DAC的实际实验条件下,测试了该传感器在高达900摄氏度、常压以及高达6吉帕压力下的性能。为此,我们在四个不同的i - 砧座上进行了高达900摄氏度的实验。我们将传感器测量的信号与连接到i - 砧座的热电偶测量的温度进行了比较。通过校准标准物质的相变测量考虑了样品腔与热电偶位置之间的温度梯度。已经建立了电流随温度变化的可重复规律。我们得出结论,i - 砧座在DAC中进行原位温度测量时可靠且灵敏,精度优于1摄氏度。