College of Science, Zhejiang University of Science and Technology, Hangzhou 310023, China.
Opt Lett. 2010 Mar 1;35(5):736-8. doi: 10.1364/OL.35.000736.
We design and experimentally report strain-compensated InGaAs/InAlAs coupled quantum wells with modified potential. At a lower applied electric field (F=50 kV/cm), the calculated blueshift of the lowest excitonic peak is 40.6 meV. In the room-temperature photocurrent experiments, a maximum upward shift of the apparent peak position of more than 35 meV is observed with an external reverse bias of -4 V. Furthermore, a lower absorption loss (alpha=9.8 cm(-1)) and a large negative refractive index change (Deltan=-0.0095) are obtained at 1.55 mum. This indicates that the strain-compensated InGaAs/InAlAs coupled quantum wells with modified potential have a great potential for application to reflection type electro-optical switches.
我们设计并实验报道了具有修正势的应变补偿 InGaAs/InAlAs 耦合量子阱。在较低的外加电场 (F=50 kV/cm) 下，计算得出最低激子峰的蓝移为 40.6 meV。在室温光电流实验中，在外加反向偏压为 -4 V 时，观察到明显的峰位上移超过 35 meV。此外，在 1.55 um 处获得了较低的吸收损耗 (alpha=9.8 cm(-1)) 和较大的负折射率变化 (Deltan=-0.0095)。这表明具有修正势的应变补偿 InGaAs/InAlAs 耦合量子阱在反射式电光开关中有很大的应用潜力。
