Mace D A, Fisher M A, Burt M G, Scott E G, Adams M J
Opt Lett. 1990 Feb 1;15(3):189-91. doi: 10.1364/ol.15.000189.
We have measured the room-temperature intensity dependence of the optical transmission of an In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As multiple-quantum-well structure from 1.5 to 1.7 microm. The absorption is calculated from the transmission by taking into account the wavelength dependence of the reflection coefficients. An intensityof 15 kW cm(-2) is required to reduce the absorption by one half for excitation at the edge of the 1H-lC transition absorption band. For intensities exceeding 10(7) W cm(-2), complete saturation of the absorption is observed. A theoretical model is described that fits the intensity dependence of the absorption right upto saturation at two wavelengths and predicts a carrier lifetime of 0.75 nsec, which has been confirmed by independent measurements.
我们测量了In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As多量子阱结构在1.5至1.7微米波长范围内的室温光透射率与光强的关系。通过考虑反射系数的波长依赖性，从透射率计算出吸收率。在1H-lC跃迁吸收带边缘激发时，需要15 kW cm(-2)的光强才能使吸收率降低一半。当光强超过10(7) W cm(-2)时，观察到吸收率完全饱和。描述了一个理论模型，该模型在两个波长下都能很好地拟合吸收率直至饱和的光强依赖性，并预测载流子寿命为0.75纳秒，这已通过独立测量得到证实。
