Noda J, Zembutsu S, Fukunishi S, Uchida N
Appl Opt. 1978 Jun 15;17(12):1953-8. doi: 10.1364/AO.17.001953.
An As(40)Se(50-x)S(x)Ge(10) film strip loaded waveguide, formed in the graded-index LiNbO(3) planar waveguide, has been demonstrated. Analytical results show that the optical field confinement in the waveguide loaded by the high refractive index film becomes large near the film cutoff thickness for the fundamental mode. Photostructural effect of the chalcogenide glass overcomes difficulty in precisely controlling film thickness. A 3-D waveguide has been achieved by loading As(40) Se(10)S(40)Ge(10) film 10 microm wide on a Ti diffused LiNbO(3) planar waveguide. Optical confinement in the waveguide has been improved intensively with the aid of the photostructural effect of the film.
已证明在渐变折射率铌酸锂平面波导中形成的一种砷化镓（40）硒化镓（50 - x）硫化镓（x）锗化镓（10）薄膜条加载波导。分析结果表明，对于基模，在高折射率薄膜加载的波导中，靠近薄膜截止厚度处的光场限制会变大。硫族化物玻璃的光结构效应克服了精确控制薄膜厚度的困难。通过在钛扩散铌酸锂平面波导上加载宽度为10微米的砷化镓（40）硒化镓（10）硫化镓（40）锗化镓（10）薄膜，实现了三维波导。借助薄膜的光结构效应，波导中的光限制得到了显著改善。
