Zembutsu S, Fukunishi S
Appl Opt. 1979 Feb 1;18(3):393-9. doi: 10.1364/AO.18.000393.
Fundamental waveguiding properties of As-Se-S-Ge chalcogenide glass films and some applications to passive waveguide components are presented. The refractive index of the chalcogenide glass film annealed just below the glass transition temperature (200 degrees C) increases by light irradiation near the absorption edge. The refractive-index change amounted to 0.03 at 1.06 microm. The propagation loss of 0.4 dB/cm has been achieved at 1-microm thickness for As(40)Se(10)S(40)Ge(10) glass film. The photoinduced refractive-index change in the chalcogenide glass film was large enough to be applied to making passive waveguide components. The curved waveguide and optical directional coupler were designed as passive components.
介绍了As-Se-S-Ge硫系玻璃薄膜的基本波导特性及其在无源波导元件中的一些应用。在略低于玻璃化转变温度(200℃)下退火的硫系玻璃薄膜,其折射率在吸收边附近通过光辐照而增加。在1.06微米处,折射率变化量达到0.03。对于As(40)Se(10)S(40)Ge(10)玻璃薄膜,在1微米厚度时实现了0.4 dB/cm的传播损耗。硫系玻璃薄膜中的光致折射率变化足够大,可应用于制作无源波导元件。弯曲波导和光定向耦合器被设计为无源元件。