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用于聚合物薄膜纳米图案化的强韧嵌段共聚物掩模。

Robust block copolymer mask for nanopatterning polymer films.

机构信息

Institute of Nanoengineering and Microsystems, National Tsing Hua University, Hsinchu 30013, Taiwan, R.O.C.

出版信息

ACS Nano. 2010 Apr 27;4(4):2088-94. doi: 10.1021/nn901370g.

Abstract

The formation of well-oriented cylinders with perpendicular morphology for polystyrene-b-polydimethylsiloxane (PS-PDMS) thin films was achieved by spin coating. The self-assembled PS-PDMS nanostructured thin films were used as templates for nanopatterning; the PDMS blocks can be oxidized as silicon oxy carbide microdomains, whereas the PS blocks were degenerated by a simple oxygen plasma treatment for one-step oxidization. As a result, freestanding silicon oxy carbide thin films with hexagonally packed nanochannels were directly fabricated and used as masks for pattern transfer to underlying polymeric materials by oxygen reaction ion etching (RIE) to generate topographic nanopatterns. By taking advantage of robust property and high etching selectivity of the SiOC thin films under oxygen RIE, this nanoporous thin film can be used as an etch-resistant and reusable mask for pattern transfer to various polymeric materials. This approach demonstrates a simple, convenient, and cost-effective nanofabrication technique to create the topographic nanopatterns of polymeric materials.

摘要

通过旋涂工艺实现了具有垂直形态的定向柱状聚苯乙烯-聚二甲基硅氧烷(PS-PDMS)薄膜的形成。自组装的 PS-PDMS 纳米结构化薄膜可用作纳米图案化的模板;PDMS 块可以被氧化为硅氧碳化硅微区,而 PS 块则可以通过简单的氧等离子体处理进行退化,从而实现一步氧化。结果,直接制备了具有六方排列纳米通道的独立式硅氧碳化硅薄膜,并用作通过氧反应离子刻蚀(RIE)对底层聚合物材料进行图案转移的掩模,以生成形貌纳米图案。通过利用氧 RIE 下 SiOC 薄膜的稳健特性和高蚀刻选择性,这种多孔薄膜可用作耐蚀刻和可重复使用的掩模,用于将图案转移到各种聚合物材料上。该方法展示了一种简单、方便且具有成本效益的纳米制造技术,可用于创建聚合物材料的形貌纳米图案。

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