Institute of Physics, Slovakian Academy of Sciences, Dúbravská cesta 9, Bratislava, Slovakia.
Ultramicroscopy. 2010 May;110(6):655-8. doi: 10.1016/j.ultramic.2010.02.027. Epub 2010 Feb 24.
Deep-Level Spectroscopy, based on transformation and analysis of capacitance or charge transients, following the excitation of the sample by voltage pulses, yields information on electrically active defects in semiconductors, hardly obtainable by other methods. Our microscope performs Isothermal Charge-Transient Spectroscopy (IQTS). It samples the transients from 2micros to tens of ms and beyond with a resolution of hundreds of electrons. By means of a small heated stage the temperature of the sample can be varied between room temperature and about 200 degrees C. From the shift of IQTS peak maxima with temperature, the activation energy and capture cross-section of defects can be obtained. We have shown that quantitative determination of concentration is possible but it requires careful analysis and simulation, since the analysed volume depends besides on the experimental conditions also on the properties of the analysed structure.
深能级谱学，基于电压脉冲激发后电容或电荷瞬变的转换和分析，提供了半导体中电活性缺陷的信息，这是其他方法难以获得的。我们的显微镜执行等温电荷瞬态光谱（IQTS）。它以数百个电子的分辨率从 2 微秒到数十毫秒甚至更长的时间对瞬态进行采样。通过一个小的加热台，样品的温度可以在室温到约 200 摄氏度之间变化。通过 IQTS 峰最大值随温度的移动，可以获得缺陷的激活能和俘获截面。我们已经证明，浓度的定量测定是可能的，但需要仔细的分析和模拟，因为分析体积不仅取决于实验条件，还取决于被分析结构的性质。
