Wang S Q, Lu F, Oh D C, Chang J H, Hanada T, Yao T
Center for Interdisciplinary Research, Tohoku University, Aoba 6-3, Aramaki, Sendai 980-8578, Japan.
Rev Sci Instrum. 2011 Sep;82(9):093905. doi: 10.1063/1.3632118.
The authors report on a new depth profiling method of deep levels, which we call electrochemical isothermal-capacitance-transient spectroscopy (EICTS). This is combined with electrochemical capacitance-voltage using the Schottky barrier of etchable electrolyte and isothermal-capacitance-transient spectroscopy using the capacitance-transient profile at a fixed temperature. We proved its validity by applying to the ZnSe:N epitaxial film of thickness of more than 1000 nm and comparing the characteristics of an obtained deep level with the results measured by conventional deep-level detection techniques. It is expected that EICTS is very effective to assess the deep levels of wide-bandgap semiconductors that suffer from various point defects and their complexes.
