Johnson L F
Appl Opt. 1979 Aug 1;18(15):2559-74. doi: 10.1364/AO.18.002559.
The faceting phenomenon of ion-beam erosion is used to determine erosion profiles of grating relief patterns on surfaces. The orientation of the planar features formed on an eroding mask are defined in terms of the erosion geometry angles ø and gamma the angle of maximum mask erosion rate over the profile. The geometry required to produce a single facet inclined at any prescribed angle is determined. Expressions are given for the facets generated in the substrate under erosion transverse to the grating stripes, taking into account shadowing effects. The results are illustrated by constructing profiles produced in GaAs by erosion of relief patterns in photoresist and examining the influence of the physical parameters of the mask, divergence of the ion beam, and selection of a different substrate. Profiles observed experimentally confirm the analysis but reveal striking modifications caused by redeposition. These modifications, however, do not involve significant buildup of sputtered material. In contrast to the transverse geometry, significant buildup of redeposited material is observed under erosion parallel to the grating lines. It is shown that buildup does not occur on surfaces that undergo erosion and redeposition simultaneously. Finally, it is shown that even uniformly eroding materials should exhibit facet formation and that the analysis is valid for all materials, regardless of the dependence of erosion rate on angle of incidence.
离子束侵蚀的刻面现象用于确定表面上光栅浮雕图案的侵蚀轮廓。在侵蚀掩膜上形成的平面特征的取向是根据侵蚀几何角度ø和γ来定义的,γ是轮廓上掩膜最大侵蚀速率的角度。确定了产生以任何规定角度倾斜的单个刻面所需的几何形状。考虑到阴影效应,给出了在垂直于光栅条纹的侵蚀下在衬底中产生的刻面的表达式。通过构建在光刻胶中蚀刻浮雕图案而在砷化镓中产生的轮廓,并研究掩膜的物理参数、离子束的发散以及不同衬底的选择的影响,来说明结果。实验观察到的轮廓证实了分析,但揭示了由再沉积引起的显著变化。然而,这些变化并不涉及溅射材料的大量堆积。与横向几何形状相反,在平行于光栅线的侵蚀下观察到再沉积材料的大量堆积。结果表明,在同时经历侵蚀和再沉积的表面上不会发生堆积。最后,结果表明,即使是均匀侵蚀的材料也应表现出刻面形成,并且该分析对所有材料都是有效的,而与侵蚀速率对入射角的依赖性无关。