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通过从老化溶液中进行浸涂,在图案化基底上形成不同结构的聚(3-己基噻吩)薄膜。

The formation of different structures of poly(3-hexylthiophene) film on a patterned substrate by dip coating from aged solution.

机构信息

State Key Lab of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate School of the Chinese Academy of Sciences, Changchun, People's Republic of China.

出版信息

Nanotechnology. 2010 Apr 9;21(14):145303. doi: 10.1088/0957-4484/21/14/145303. Epub 2010 Mar 10.

DOI:10.1088/0957-4484/21/14/145303
PMID:20215657
Abstract

Different local morphologies of poly(3-hexylthiophene) (P3HT, M(w) = 87,000 and 30,000-40,000 g mol(- 1)) are grown on a patterned substrate, which is composed of octadecyltrichlorosilane (OTS area) stripes on a silicon wafer (SiO(x) area), via dip coating from the aged solutions. Bundles of P3HT (M(w) = 87,000 g mol(- 1)) nanorods on the SiO(x) area and long nanofibrillar crystals on the OTS area are generated simultaneously from the one-day-aged 1 mg ml(- 1) solution, while oriented P3HT (M(w) = 30,000-40,000 g mol(- 1)) nanofibrillar crystals parallel to the long axis of the OTS pattern form on the OTS area from the seven-days-aged solution (1 mg ml(- 1)). Different dimensional sizes of the P3HT aggregate in the toluene solution upon aging and the flow of the solution from SiO(x) to the OTS area, on which the receding contact angle is larger than that on the SiO(x) area, determines the local structures of the P3HT film on the patterned substrate.

摘要

不同形貌的聚 3-己基噻吩(P3HT,Mw = 87,000 和 30,000-40,000 g/mol)在图案化基底上生长,基底由硅晶片上的十八烷基三氯硅烷(OTS 区域)条纹(SiO(x)区域)组成,通过从老化溶液中进行浸涂来实现。从一天老化的 1 mg/ml 溶液中,同时在 SiO(x)区域上生成 P3HT(Mw = 87,000 g/mol)纳米棒的束和在 OTS 区域上的长纳米纤维状晶体,而从七天老化的溶液(1 mg/ml)中,在 OTS 图案的长轴上形成取向的 P3HT(Mw = 30,000-40,000 g/mol)纳米纤维状晶体。在老化过程中甲苯溶液中 P3HT 聚集体的不同维度尺寸以及溶液从 SiO(x)流到 OTS 区域,OTS 区域上的后退接触角大于 SiO(x)区域上的后退接触角,决定了图案化基底上 P3HT 薄膜的局部结构。

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