Ali Kamran, Pietsch Ullrich, Grigorian Souren
Department of Physics, University of Siegen, Walter-Flex-Strasse 3, Siegen, 57072, Germany.
J Appl Crystallogr. 2013 Aug 1;46(Pt 4):908-911. doi: 10.1107/S0021889813004718. Epub 2013 Jun 7.
Organic field-effect transistors (OFETs) were fabricated by depositing a regioregular poly(3-hexylthiophene) (P3HT) active layer using a dip-coating method. The field-effect mobility in OFETs depends on chain orientation and crystallinity and is related to direction and withdrawal speed with respect to the source/drain orientation. In this paper, how to control the structural and transport properties of P3HT films by coating parallel and perpendicular to the dipping direction is demonstrated. X-ray diffraction curves taken in the perpendicular direction exhibit a higher degree of crystalline ordering and edge-on conformation compared with those in the parallel direction; this finding correlates with the directional anisotropy of the OFET mobility. Both structural anisotropy and transport properties are enhanced upon thermal treatment.
通过浸涂法沉积区域规整的聚(3-己基噻吩)(P3HT)活性层来制备有机场效应晶体管(OFET)。OFET中的场效应迁移率取决于链取向和结晶度,并且与相对于源极/漏极取向的方向和提拉速度有关。本文展示了如何通过平行于和垂直于浸渍方向进行涂覆来控制P3HT薄膜的结构和传输性能。与平行方向的曲线相比,垂直方向的X射线衍射曲线显示出更高程度的结晶有序性和边缘取向构象;这一发现与OFET迁移率的方向各向异性相关。经过热处理后,结构各向异性和传输性能均得到增强。