Ohira Kazuya, Kobayashi Kentaro, Iizuka Norio, Yoshida Haruhiko, Ezaki Mizunori, Uemura Hiroshi, Kojima Akihiro, Nakamura Kenro, Furuyama Hideto, Shibata Hideki
Corporate Research & Development Center, Toshiba Corporation,1 Kimukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan.
Opt Express. 2010 Jul 19;18(15):15440-7. doi: 10.1364/OE.18.015440.
On-chip integration of III-V laser diodes and photodetectors with silicon nanowire waveguides is demonstrated. Through flip-chip bonding of GaInNAs/GaAs laser diodes directly onto the silicon substrate, efficient heat dissipation was realized and characteristic temperatures as high as 132K were achieved. Spot-size converters for the laser-to-waveguide coupling were used, with efficiencies greater than 60%. The photodetectors were fabricated by bonding of InGaAs/InP wafers directly to silicon waveguides and formation of metal-semiconductor-metal structures, giving responsivities as high as 0.74 A/W. Both laser diode and the photodetector were integrated with a single silicon waveguide to demonstrate a complete on-chip optical transmission link.
展示了III-V族激光二极管和光电探测器与硅纳米线波导的片上集成。通过将GaInNAs/GaAs激光二极管倒装芯片键合直接到硅衬底上，实现了高效散热，并获得了高达132K的特征温度。使用了用于激光与波导耦合的光斑尺寸转换器，效率大于60%。光电探测器通过将InGaAs/InP晶片直接键合到硅波导上并形成金属-半导体-金属结构来制造，响应度高达0.74 A/W。激光二极管和光电探测器都与单个硅波导集成，以展示完整的片上光传输链路。
