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利用集成III-V族激光二极管和带有硅波导的光电探测器实现片上光互连。

On-chip optical interconnection by using integrated III-V laser diode and photodetector with silicon waveguide.

作者信息

Ohira Kazuya, Kobayashi Kentaro, Iizuka Norio, Yoshida Haruhiko, Ezaki Mizunori, Uemura Hiroshi, Kojima Akihiro, Nakamura Kenro, Furuyama Hideto, Shibata Hideki

机构信息

Corporate Research & Development Center, Toshiba Corporation,1 Kimukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan.

出版信息

Opt Express. 2010 Jul 19;18(15):15440-7. doi: 10.1364/OE.18.015440.

Abstract

On-chip integration of III-V laser diodes and photodetectors with silicon nanowire waveguides is demonstrated. Through flip-chip bonding of GaInNAs/GaAs laser diodes directly onto the silicon substrate, efficient heat dissipation was realized and characteristic temperatures as high as 132K were achieved. Spot-size converters for the laser-to-waveguide coupling were used, with efficiencies greater than 60%. The photodetectors were fabricated by bonding of InGaAs/InP wafers directly to silicon waveguides and formation of metal-semiconductor-metal structures, giving responsivities as high as 0.74 A/W. Both laser diode and the photodetector were integrated with a single silicon waveguide to demonstrate a complete on-chip optical transmission link.

摘要

展示了III-V族激光二极管和光电探测器与硅纳米线波导的片上集成。通过将GaInNAs/GaAs激光二极管倒装芯片键合直接到硅衬底上,实现了高效散热,并获得了高达132K的特征温度。使用了用于激光与波导耦合的光斑尺寸转换器,效率大于60%。光电探测器通过将InGaAs/InP晶片直接键合到硅波导上并形成金属-半导体-金属结构来制造,响应度高达0.74 A/W。激光二极管和光电探测器都与单个硅波导集成,以展示完整的片上光传输链路。

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