Knittl Z
Appl Opt. 1981 Jan 1;20(1):105-10. doi: 10.1364/AO.20.000105.
Mouchart's theory of the buffer layer is reformulated in terms of internal antireflection and extended to general dielectric/metallic media. The all-dielectric case is then studied in oblique incidence as a means of depolarizing partial reflectors. Several procedures are indicated for the construction of buffering stacks which, when coupled with germinal stacks, balance out their p and s reflections at the given level. Examples of depolarized half-mirrors are presented. A novel version of the Argand diagram for thin films in oblique incidence is introduced during the analysis.
穆沙尔的缓冲层理论根据内抗反射重新表述，并扩展到一般的电介质/金属介质。然后研究了全电介质情况下的斜入射，以此作为使部分反射器去极化的一种手段。指出了几种构建缓冲堆栈的方法，当与发芽堆栈耦合时，这些方法能在给定水平上平衡其p偏振和s偏振反射。给出了去极化半反射镜的示例。在分析过程中引入了斜入射薄膜的阿冈图的一种新形式。
